Substrate based light emitter devices, components, and related methods

ABSTRACT

Substrate based light emitter devices, components, and related methods are disclosed. In some aspects, light emitter components can include a substrate and a plurality of light emitter devices provided over the substrate. Each device can include a surface mount device (SMD) adapted to mount over an external substrate or heat sink. In some aspects, each device of the plurality of devices can include at least one LED chip electrically connected to one or more traces and at least one pair of bottom contacts adapted to mount over a surface of external substrate. The component can further include a continuous layer of encapsulant disposed over each device of the plurality of devices. Multiple devices can be singulated from the component.

CROSS REFERENCE TO RELATED APPLICATIONS

This application relates to, is a continuation-in-part of, and claimspriority to U.S. patent application Ser. No. 13/755,993, filed Jan. 31,2013, which claims priority to U.S. Provisional Patent Application Ser.Nos. 61/618,327, filed Mar. 30, 2012, and 61/642,995, filed May 4, 2012,the disclosures of each of which are incorporated by reference herein inthe entireties.

TECHNICAL FIELD

The subject matter disclosed herein relates generally to substrate basedlight emitter devices, components, and related methods. Moreparticularly, the subject matter disclosed herein relates to batchprocessed substrate based devices components, and related methods.

BACKGROUND

Light emitting diodes (LEDs) or LED chips are solid state devices thatconvert electrical energy into light. LED chips can be utilized in lightemitter devices or components for providing different colors andpatterns of light useful in various lighting and optoelectronicapplications. Light emitter devices can include surface mount devices(SMDs) which can be mounted directly onto the surface of an underlyingcircuit component or heat sink, such as a printed circuit board (PCB) ormetal core printed circuit board (MCPCB). SMDs can comprise bottomelectrical contacts or leads configured to directly mount to theunderlying circuit component. SMDs can be used in various LED light bulband light fixture applications and are developing as replacements forincandescent, fluorescent, and metal halide high-intensity discharge(HID) lighting applications.

Manufacturers of LED lighting products are constantly seeking ways toreduce their cost in order to provide a lower initial cost to customers,and encourage the adoption of LED products. Devices and componentsincorporating fewer raw materials at sustained or increased brightnesslevels using the same or less power are becoming more desirable.

Conventional light emitter devices, components, and methods utilize oneor more LED chips individually mounted within a molded component bodyand/or individually mounted and individually encapsulated over a ceramicbody. Individually molding, individually encapsulating, and/orindividually processing devices can be both expensive andtime-consuming. For example, problems associated with individuallyencapsulating LED chips includes sticking, inconsistent dispenses (e.g.,over/under fills), and the increased time associated with individuallyencapsulating LED chips can cause phosphors to settle. Thus, obtainingconsistent color targeting has been a problem. To date, there are nobatch processed and/or batch encapsulated light emitter devices orcomponents, but rather current devices and/or components areindividually processed and/or provided.

Thus, despite the availability of various light emitter devices andcomponents in the marketplace, a need remains for devices, components,and methods which can be produced quickly, efficiently, and at a lowercost. In some aspects, substrate based devices and components can allowfor customized light emitter products having different trace patterns,different via placement, different LED chip connectivity, differentdimensions, and/or different optical properties. Devices and componentscan be single or multi-chip components, and can make it easier forend-users to justify switching to LED products from a return oninvestment or payback perspective.

SUMMARY

In accordance with this disclosure, substrate based light emitterdevices, components, and related methods having improvedmanufacturability and customization are provided and described herein.Devices, components, and methods described herein can advantageouslyexhibit improved processing times, ease of manufacture, and/or lowerprocessing costs. Devices, components, and related methods describedherein can be well suited for a variety of applications such aspersonal, industrial, and commercial lighting applications including,for example, light bulbs and light fixture products and/or applications.In some aspects, devices, components, and related methods describedherein can comprise improved (e.g., less expensive and more efficient)manufacturing processes and/or improved optical properties includingconsistent color targeting and improved reflection. This can providedevices and components having excellent brightness with a smallerfootprint. It is, therefore, an object of the present disclosure toprovide light emitter devices, components, and methods that aresubstrate based, in some aspects, by allowing a multitude of differentdevices to be created over a substrate component, without incurring theexpense associated with custom fabricated packages.

These and other objects of the present disclosure as can become apparentfrom the disclosure herein are achieved, at least in whole or in part,by the subject matter disclosed herein.

BRIEF DESCRIPTION OF THE DRAWINGS

A full and enabling disclosure of the present subject matter includingthe best mode thereof to one of ordinary skill in the art is set forthmore particularly in the remainder of the specification, includingreference to the accompanying figures, in which:

FIGS. 1A to 1D are perspective views illustrating substrate based lightemitter devices and components according to aspects of the disclosureherein;

FIGS. 2A to 2F are side views illustrating portions of substrate basedlight emitter devices and components according to aspects of thedisclosure herein;

FIGS. 3A to 3E are side views illustrating portions of substrate basedlight emitter devices and components according to aspects of thedisclosure herein;

FIGS. 4A and 4D are side views illustrating portions of substrate basedlight emitter devices and components according to aspects of thedisclosure herein;

FIG. 5 is a side view illustrating a substrate based light emittingdevice according to aspects of the disclosure herein;

FIGS. 6A and 6B are top and bottom views, respectively, illustrating asubstrate based light emitting device according to aspects of thedisclosure herein;

FIG. 7 is a flow chart illustrating exemplary steps for providingsubstrate based light emitter devices and components according toaspects of the disclosure herein;

FIG. 8 is a side view illustrating portions of substrate based lightemitter devices and components according to aspects of the disclosureherein;

FIG. 9 is a graphical illustration of exemplary color targeting andcolor consistency associated with substrate based light emitter devicesand components according to aspects of the disclosure herein; and

FIG. 10 is a further embodiment of substrate based light emitter devicesand components according to aspects of the disclosure herein.

DETAILED DESCRIPTION

The subject matter disclosed herein is directed to substrate based lightemitter devices, components, and related methods, for use with lightemitting diode (LED) chips. Devices, components, and methods providedherein can exhibit improved manufacturability as well as provide forcustomized devices and components for supporting LED chips and allowingelectrically connectivity thereof, without incurring the expenseassociated with custom fabricated ceramic or plastic packages.

In some aspects, substrate based devices can be processed as a batch.That is, multiple LED chips can be die attached proximate a same time,wirebonded proximate a same time, encapsulated proximate a same time viaone large application of encapsulant, among other processes. Suchprocessing techniques can unexpectedly provide for a more consistentcolor across multiple devices, thus, there can be less waste.

In some aspects, devices, components, and methods described herein caninclude ablating material between adjacent devices on a given componentduring a batch process such as scribing. In some aspects, a reflectivematerial can be provided in the ablated regions. In other aspects,devices can be singulated without filling the ablated regions.

Notably, one, two, or multiple layers of encapsulant can be provided forforming an optical element, as a batch, over multiple devices and/orcomponents as described herein. In some aspects, each layer can comprisea same or a different composition and/or color of phosphor. In otheraspects, some layers can comprise a phosphor and some layers can beoptically clear and/or be devoid of phosphor. In further aspects, eachlayer can be devoid of phosphor. Notably, encapsulant can be applied inone continuous layer over the substrate and devices, prior toencapsulation.

Notably, devices, components, and related methods described herein canprovide efficient and cost-effective light emitter products, which canbe easily customized and provide a consistent, predictable desired colorpoint without resulting in wasted product.

Devices and components provided herein can comprise a reflective lateralside wall comprised of a reflective material. In some aspects, thereflective material can be applied during a batch processing step, andcan be dispensed. In other aspects, the reflective lateral side wall cancomprise a reflector inserted into one or more ablated regions ofmaterial formed during a scribing process. The wall can be disposed overa lower recessed portion or ledge of substrate at least partially abovea height or upper surface of a light emitter chip. Another portion ofthe wall can be disposed below a level, such as a bottom surface level,of the light emitter chip. This can be advantageous, as light emittedbelow the LED chip can be reflected out by lower portion of the wall.

In alternative aspects, devices and components provided herein cancomprise and/or at least partially comprise a non-reflective lateralside wall. That is, in some aspects, a side wall can be provided whenmaterial is provided within scribe marks, and when devices aresingulated from a component. Material can be applied into scribe marksduring a batch processing step, and can be dispensed. In other aspects,the material forming the lateral side wall can comprise a body ofmaterial that can be inserted into one or more ablated regions ofmaterial formed during a scribing process. In some aspects, the sidewall can comprise a material adapted to block light, a material adaptedto absorb light, a material adapted to filter light, a material adaptedto diffuse light, combinations thereof, and/or any of the aforementionedmaterials can be used in combination with a reflector or reflectivematerial. The wall can be disposed over a lower recessed portion orledge of substrate below or partially above a height or upper surface ofa light emitter chip.

In further aspects, devices described herein can be devoid of an outerreflector, an outer layer of reflective material, and/or a reflectivewall. In some aspects, a device can comprise an ablated edge. Theablated edge of the device can comprise a portion of encapsulantdisposed flush against one side of the substrate. In some aspects, alower recessed portion or ledge of the substrate can extend below theablated edge. This can be advantageous, as light emitted by the LED chipcan be reflected back up via the ledge of substrate, as substrate cancomprise a highly reflective ceramic material.

In further aspects, devices described herein can have the reflectivewall added from the backside of the substrate. Ablation or removal ofmaterial from the backside of the substrate, relative to the LED, andextending into the encapsulated region of the LED side is advantageousas this allows angles to be easily formed which are advantageous tolight output. The created region is then filled with reflective materialto form a reflective cavity for the light. (See picture at end of thisdocument).

As used herein, the terms “batch processing” or processing as a “batch”refer to performing a particular operation on a group of devices orcomponents all at once rather than manually operating on each device orcomponent, one at a time.

Reference will be made in detail to possible aspects or embodiments ofthe subject matter herein, one or more examples of which are shown inthe figures. Each example is provided to explain the subject matter andnot as a limitation. In fact, features illustrated or described as partof one embodiment can be used in another embodiment to yield still afurther embodiment. It is intended that the subject matter disclosed andenvisioned herein covers such modifications and variations.

As illustrated in the various figures, some sizes of structures orportions are exaggerated relative to other structures or portions forillustrative purposes and, thus, are provided to illustrate the generalstructures of the present subject matter. Furthermore, various aspectsof the present subject matter are described with reference to astructure or a portion being formed on other structures, portions, orboth. As will be appreciated by those of skill in the art, references toa structure being formed “on” or “above” another structure or portioncontemplates that additional structure, portion, or both may intervene.References to a structure or a portion being formed “on” anotherstructure or portion without an intervening structure or portion aredescribed herein as being formed “directly on” the structure or portion.Similarly, it will be understood that when an element is referred to asbeing “connected”, “attached”, or “coupled” to another element, it canbe directly connected, attached, or coupled to the other element, orintervening elements may be present. In contrast, when an element isreferred to as being “directly connected”, “directly attached”, or“directly coupled” to another element, no intervening elements arepresent.

Furthermore, relative terms such as “on”, “above”, “upper”, “top”,“lower”, or “bottom” are used herein to describe one structure's orportion's relationship to another structure or portion as illustrated inthe figures. It will be understood that relative terms such as “on”,“above”, “upper”, “top”, “lower” or “bottom” are intended to encompassdifferent orientations of the device or component in addition to theorientation depicted in the figures. For example, if the device orcomponent in the figures is turned over, structure or portion describedas “above” other structures or portions would now be oriented “below”the other structures or portions. Likewise, if devices or components inthe figures are rotated along an axis, structure or portion described as“above”, other structures or portions would be oriented “next to” or“left of” the other structures or portions. Like numbers refer to likeelements throughout.

Unless the absence of one or more elements is specifically recited, theterms “comprising”, including”, and “having” as used herein should beinterpreted as open-ended terms that do not preclude the presence of oneor more elements.

As used herein, the terms “through-hole”, “thru-hole”, and/or “via” aresynonymous and refer an opening in the panel substrate and/or asubmount, often filled and/or lined (e.g., along one or more side walls)with an electrically conductive material that allows for an electricallyconductive conduit or pathway between different layers, surfaces, orfeatures of the devices or components. The term “exposing” a thru-holeor via refers to sawing, cutting, dicing, breaking, etching, uncovering,displacing, or otherwise causing the metal disposed inside the via to beexposed on an external surface of the panel substrate or submount. Thus,the conductive material will be “exposed” outside of and/or along anexterior, outer surface of the device, component, panel substrate, orsubmount.

As used herein a “ceramic based material” or the term “ceramic based”includes a material that consists primarily of a ceramic material, suchas an inorganic, non-metallic material made from compounds of a metal ormetalloid and a non-metal (e.g., aluminum nitride, aluminum oxide,beryllium oxide, silicon carbide). A “non-ceramic based material”consists primarily a metallic material, a primarily organic (e.g.,polymeric) material, and/or a primarily synthetic or semi-syntheticorganic solid that can be dispensed or molded (e.g., plastic).

Light emitter devices and components according to embodiments describedherein can comprise group III-V nitride (e.g., gallium nitride (GaN))based LED chips or lasers. Fabrication of LED chips and lasers isgenerally known and only briefly described herein. LED chips or laserscan be fabricated on a growth substrate, for example, a silicon carbide(SiC) substrate, such as those devices manufactured and sold by Cree,Inc. of Durham, N.C. Other growth substrates are also contemplatedherein, for example and not limited to sapphire, silicon (Si), and GaN.In some aspects, SiC substrates/layers can be 4H polytype siliconcarbide substrates/layers. Other SiC candidate polytypes, such as 3C,6H, and 15R polytypes, however, can be used. Appropriate SiC substratesare available from Cree, Inc., of Durham, N.C., the assignee of thepresent subject matter, and the methods for producing such substratesare set forth in the scientific literature as well as in a number ofcommonly assigned U.S. patents, including but not limited to U.S. Pat.No. Re. 34,861, U.S. Pat. No. 4,946,547, and U.S. Pat. No. 5,200,022,the disclosures of which are incorporated by reference herein in theirentireties. Any other suitable growth substrates are contemplatedherein.

As used herein, the term “Group III nitride” refers to thosesemiconducting compounds formed between nitrogen and one or moreelements in Group III of the periodic table, usually aluminum (Al),gallium (Ga), and indium (In). The term also refers to binary, ternary,and quaternary compounds such as GaN, AlGaN and AlInGaN. The Group IIIelements can combine with nitrogen to form binary (e.g., GaN), ternary(e.g., AlGaN), and quaternary (e.g., AlInGaN) compounds. These compoundsmay have empirical formulas in which one mole of nitrogen is combinedwith a total of one mole of the Group III elements. Accordingly,formulas such as AlxGa1-xN where 1>x>0 are often used to describe thesecompounds. Techniques for epitaxial growth of Group III nitrides havebecome reasonably well developed and reported in the appropriatescientific literature.

Although various embodiments of LED chips disclosed herein can comprisea growth substrate, it will be understood by those skilled in the artthat the crystalline epitaxial growth substrate on which the epitaxiallayers comprising an LED chip are grown can be removed, and thefreestanding epitaxial layers can be mounted on a substitute carriersubstrate or substrate which can have different thermal, electrical,structural and/or optical characteristics than the original substrate.The subject matter described herein is not limited to structures havingcrystalline epitaxial growth substrates and can be used in connectionwith structures in which the epitaxial layers have been removed fromtheir original growth substrates and bonded to substitute carriersubstrates.

Group III nitride based LED chips according to some embodiments of thepresent subject matter, for example, can be fabricated on growthsubstrates (e.g., Si, SiC, or sapphire substrates) to provide horizontaldevices (with at least two electrical contacts on a same side of the LEDchip) or vertical devices (with electrical contacts on opposing sides ofthe LED chip). Moreover, the growth substrate can be maintained on theLED chip after fabrication or removed (e.g., by etching, grinding,polishing, etc.). The growth substrate can be removed, for example, toreduce a thickness of the resulting LED chip and/or to reduce a forwardvoltage through a vertical LED chip. A horizontal device (with orwithout the growth substrate), for example, can be flip chip bonded(e.g., using solder) to a carrier substrate or printed circuit board(PCB), or wirebonded. A vertical device (with or without the growthsubstrate) can have a first terminal (e.g., anode or cathode) solderbonded to a carrier substrate, mounting pad, or PCB and a secondterminal (e.g., the opposing anode or cathode) wirebonded to the carriersubstrate, electrical element, or PCB. Examples of vertical andhorizontal LED chip structures are discussed by way of example in U.S.Publication No. 2008/0258130 to Bergmann et al. and in U.S. Pat. No.7,791,061 to Edmond et al. which issued on Sep. 7, 2010, the disclosuresof which are hereby incorporated by reference herein in theirentireties. LED chips used and/or described herein can be configured toemit blue light, cyan light, green light, yellow light, red light, amberlight, red-orange light, and/or any combination(s) thereof.

As described herein, one or more LED chips can be at least partiallycoated with one or more phosphors and/or one or more layers ofphosphors. Phosphors can be adapted to emit blue light, yellow light,green light, red light, or any combination(s) thereof upon beingimpinged with light emitted via one or more LED chips. That is, in someaspects one or more phosphors can absorb a portion of light emitted bythe LED chip and in-turn reemit the absorbed light at a differentwavelength such that the light emitter device or component emits acombination of light from each of the LED chip(s) and the phosphor(s).In one embodiment, the light emitter devices and components describedherein can emit what is perceived as white light resulting from acombination of light emission from the LED chip and the phosphor. In oneembodiment according to the present subject matter, white emittingdevices and components can consist of an LED chip that emits light inthe blue wavelength spectrum and a phosphor that absorbs some of theblue light and re-emits light in the green, yellow, and/or redwavelength spectrum. The devices and components can therefore emit awhite light combination across the visible spectrum of light. In otherembodiments, the LED chips can emit a non-white light combination ofblue and yellow light as described in U.S. Pat. No. 7,213,940. LED chipsemitting red light or LED chips covered by a phosphor that absorbs LEDlight and emits a red light is also contemplated herein.

LED chips can be coated with a phosphor using many different methods,with one suitable method being described in U.S. patent application Ser.Nos. 11/656,759 and 11/899,790, both entitled “Wafer Level PhosphorCoating Method and Devices Fabricated Utilizing Method”, and both ofwhich are incorporated herein by reference in their entireties. Othersuitable methods for coating one or more LED chips are described forexample in U.S. Pat. No. 8,058,088 entitled “Phosphor Coating Systemsand Methods for Light Emitting Structures and Packaged Light EmittingDiodes Including Phosphor Coating” which issued on Nov. 15, 2011, andthe continuation-in-part application U.S. patent application Ser. No.12/717,048 entitled “Systems and Methods for Application of OpticalMaterials to Optical Elements”, the disclosures of which are herebyincorporated by reference herein in their entireties. LED chips can alsobe coated using other methods such as electrophoretic deposition (EPD),with a suitable EPD method described in U.S. patent application Ser. No.11/473,089 entitled “Close Loop Electrophoretic Deposition ofSemiconductor Devices”, which is also incorporated herein by referencein its entirety. It is understood that light emitter devices,components, and methods according to the present subject matter can alsohave multiple LED chips of different colors, one or more of which can bewhite emitting.

FIGS. 1A through 9 illustrate embodiments of substrate based lightemitter devices, components, and related methods according to thepresent subject matter as disclosed and described herein. In someaspects, light emitter devices described herein can comprise surfacemount devices (SMDs). FIGS. 1A to 1D illustrate a substrate based lightemitter component, generally designated 10, from which one or more lightemitter devices (e.g., FIG. 5) can be singulated. In some aspects, FIGS.1A to 1D can be illustrative of component 10 as it is subjected tovarious batch processing steps and/or manufacturing stages. Notably, aplurality of components 10 can be processed together as a batch. Thiscan provide consistent color targeting across a plurality of deviceswhich can be singulated therefrom, improve processing time, and reduceprocessing costs.

Referring to FIG. 1A and in some aspects, component 10 can comprise apanel or panel substrate 12 from which multiple individual substratebased devices can be singulated (e.g., 50, FIG. 5). Notably, customizeddevices can be inexpensively built and manufactured as a batch, in oneor more novel processing steps over substrate 12 prior to singulationinto individual devices. That is, in some aspects substrate 12 canprovide a base or support for devices which can be customized perconsumer and/or customer needs or requirements. For example, substrate12 can be customized in regards to a type, size, build, structure,number and/or color of LED chip(s), a size and shape of customizedtraces, provision of customized reflectors, provision of customizedoptical elements, and/or provision of vias, prior to singulation intoindividual devices. Other aspects can be customized as well, includingthe ultimate size of each device to be singulated. In some aspects,individually customized components 10 can be provided over and/orsupported via substrate 12, and can be referred to as comprising“substrate based” components.

In some aspects, substrate 12 can comprise a metallic material, anon-metallic material, a ceramic material, a plastic material, acomposite material, a flame retardant (e.g., FR-4) composite material,combinations thereof, or any other type of material. In some aspects,substrate 12 can comprise a highly reflective and/or optionallytransparent ceramic based material for maximizing light extraction andreflectance from light emitters. In some aspects, substrate 12 cancomprise aluminum oxide (e.g., alumina or Al₂O₃) or derivatives thereof,aluminum nitride (AlN) or derivatives thereof, zirconium dioxide (ZrO₂)or derivatives thereof, or any other ceramic based material.

In some aspects, substrate 12 can comprise a ceramic body that can becast from low temperature co-fired ceramic (LTCC) materials or hightemperature co-fired ceramic (HTCC) materials and/or via relatedprocesses. In one aspect, substrate 12 can be cast from a thin greenceramic tape and subsequently fired. Where used, the ceramic tape cancomprise any ceramic filler material known in the art, for example,substrate 12 can comprise a glass ceramic, such as Al₂O₃ or aluminumnitride (AlN) having approximately 0.3 to 0.5 weight percent of glassfrits. The glass frits can be used as a binder and/or sinteringinhibitor within the ceramic tape when the tape is fired.

In some aspects using a green ceramic tape for substrate 12 canadvantageously provide a substrate having any desired thickness, thuscontributing to thinner or thicker sizes, where required. Such featurescan be easily customized, where desired. In some aspects, substrate 12can comprise a ceramic material having any of a variety of lightscattering particles contained therein. Examples of suitable scatteringparticles can, for example, comprise particles of Al₂O₃, TiO₂, BaSO₄,and/or AlN. In some aspects, substrate 12 can optionally be produced bythin- or thick-film processing techniques available at and includingproducts available from CoorsTek, headquartered in Golden, Colo. Suchsubstrate 12 can optionally be fired along with other materials (e.g.,zirconia, ZrO₂) to further improve optical and mechanical properties.

Substrate 12 can comprise a panel of any suitable size, shape,orientation, and/or configuration. For illustration purposes, asubstantially square or rectangular shaped substrate 12 is shown,however, any shape of substrate is contemplated herein. For example, anyone of a substantially rectangular, circular, oval, rounded, regular,irregular, or asymmetrically shaped substrate is also contemplatedherein. Substrate 12 can for example comprise a substantially square orrectangular shape having at least one side of at least approximately 2inches (″) or more; 4″ or more; 8″ or more, or more than 12″. In someaspects, substrate 12 can be provided as a long material (e.g., on areel). The material can be unrolled from the reel and devices thereoncan be batch processed (e.g., batch die attached, batch encapsulated,etc.) and individual devices can be singulated therefrom afterencapsulation and formation of an optical reflector or application ofreflective material (26, FIG. 2E). Substrate 12 can comprise anysuitable thickness, for example, a thickness of approximately 2 mm orless, such as approximately 1 mm or less, approximately 0.5 mm or less,or approximately 0.25 mm or less. In some aspects, substrate 12comprises a thickness of about 0.635 mm.

In some aspects, the size, shape, and/or thickness of substrate 12 caneach be customized, where necessary, and can obviate the need forproviding individually molded and/or individually pressed ceramicsubstrates.

Still referring to FIG. 1A and in some aspects, substrate 12 canoptionally comprise one or more openings, through-holes or vias,generally designated 14. For illustration purposes, a plurality ofsubstantially circular shaped vias 14 are illustrated, however, anysize, shape, and/or cross-sectional shape of vias 14 can be provided.Vias 14 are illustrated in broken lines as they are optional and/or maynot be visible (e.g., very small). Where used, vias 14 can be drilled,punched, machined, etched, formed with a laser, or any other processingtechnique. An electrically conductive material, such as a metal or metalalloy, can be provided inside portions of vias 14 for creatingelectrically conductive conduits through substrate 12.

In some aspects, vias 14 can be filled with and/or have side walls atleast partially coated with a metal and/or a conductive material such assilver (Ag), copper (Cu), gold (Au), tin (Sn), platinum (Pt), and/or Ag,Cu, Au, Sn, or Pt alloys for electrically connecting top electricalcontacts with bottom electrical contacts of an SMD type device orcomponent. In other aspects, conductive material disposed within vias 14can be exposed during singulation (e.g. sawn, diced, broken, etc.)thereby providing vias 14 along one or more sides to form novelelectrical contacts disposed on three surfaces of the component (e.g., atop surface, a bottom surface, and a lateral side surface). Vias 14,where used, can be customized with respect to size, shape, number, andplacement.

FIG. 1B illustrates one or more electrically conductive contacts ortraces 16 disposed over a first surface of substrate 12. Where optionalvias 14 (FIG. 1) are present, electrical traces 16 can be at leastpartially disposed over and/or cover vias 14 such that they may not bevisible. Traces 16 can be customized with respect to size, shape, and/orplacement over substrate 12. In some aspects, traces 16 can be coated ordeposited over substrate 12 via physical deposition techniques, chemicaldeposition techniques, vapor deposition techniques, electroless platingtechniques, electroplating techniques, or any other coating technique.

In other aspects, an optional mask M having a plurality of openings Ocan be applied prior to deposition of traces 16, such that traces can beprinted, stenciled, or screen-printed over substrate. That is, mask Mallows traces 16 to only be applied or deposited over substrate 12within the boundaries of openings O. Mask M can advantageously coverportions of substrate 16 and protect the reflectivity or “whiteness” ofsubstrate 16 by preventing metal deposition within such areas. Thus, insome aspects, traces 16 can be applied via shadow, stenciling, mask,printing, screen printing, lithography, or any other similarmasking/covering technique.

In some aspects, traces 16 can comprise one more layers of Cu, titanium(Ti), nickel (Ni), Ag, electroless Ag, Au, electroless nickel immersiongold (ENIG), Sn, palladium (Pd), electrolytic or immersion Au,combinations thereof, and/or any other material which can be applied viaa deposition process, such as physical deposition, sputtering, e-beam,electroplating, and/or electroless plating processes noted above. Insome aspects, traces 16 can comprise multiple different layers of metalsor materials applied or coated in layers over each other. For example,one or more layers of Ti, Ag, and/or Cu can be applied over substrate12. In some aspects, a layer of Ti can be directly deposited directlyover substrate 16. The Ti layer can be coated with one or more layers ofAg and/or Cu. In other aspects, one or more alternating layers of metal(e.g., alternating layers of Ti, Ag, and/or Cu) can be applied oversubstrate 12. In some aspects, traces 16 can comprise at least one layerof Ag, either alone or in combination with layers of electroplated Ti,Ni, Cu, and/or Au. In other aspects, traces 16 can comprise at least onelayer of Cu, either alone or in combination with layers of electrolessor electroplated Ti, Ag, Ni, and/or Au. In some aspects, each trace 16of the plurality of traces can comprise an overall thickness ofapproximately 10 μm or more, approximately 20 μm or more, approximately50 μm or more, or more than approximately 80 μm.

Traces 16 of component 10 can be disposed along a front sidecorresponding to top surface of substrate 12 and spaced apart from LEDchips 18. Together, two traces 16 can comprise an anode/cathode pairadapted to transfer electrical current into and out of LED chips 18,causing the illumination thereof, when subjected to electrical current.In some aspects, each trace 16 can be fully disposed on a top side ortop surface of substrate 12. In other aspects traces which wrap aroundsides of substrate 12 can be provided. In some aspects, vias 14 (FIG.1A) can allow traces 16 to electrically communicate with bottom contacts(e.g., 72, 74, FIG. 6B).

As FIG. 1C illustrates, a plurality of LED chips 18 can be die attachedto and/or mounted over front side of substrate 12, adjacent traces 16.In some aspects, LED chips 18 can be disposed between one or more traces16 and wirebonded thereto. In other aspects, LED chips 18 can bedirectly attached over portions of one or more traces, for example,where the LED chips 18 have electrical contacts on a bottom surface ofthe chip. LED chips 18 can be vertically structured (e.g., contacts ontwo opposing surfaces) or horizontally structured (e.g., both contactson a same surface, such as an upper or lower surface).

In some aspects, LED chips 18 can comprise substantially straight cutand/or bevel cut (e.g., sloped or inclined) lateral sides and cancomprise any shape, size, dimension, structure, build, and/or color.Notably, devices, components, and methods described herein can becustomized using any type and/or number of LED chips 18, as desired. Insome aspects, each LED chip 18 of the plurality of die attached chipscan comprise a same shape, size, dimension, structure, build, and/orcolor. In other aspects, some LED chips 18 of the plurality of LED chips18 can comprise different shapes, sizes, dimensions, structures, buildsand/or colors. In some aspects, multiple components 10 can be processedat a same time, and can contain different numbers, sizes, shapes, etc.of LED chips 18. Any single type or combinations of different LED chips18 can be provided. LED chips 18 can comprise a growth substrate or acarrier substrate, and can comprise a vertically structured chip (e.g.,anode and cathode on opposing surfaces of LED chip 18) or a horizontallystructured chip (e.g., anode and cathode on a same surface).

Still referring to FIG. 1C, LED chips 18 can comprise any size and/orshape. In some aspects, LED chips 18 can be substantially square,rectangular, regular, irregular, or asymmetrical in shape. In someaspects, LED chips 18 can, for example, comprise a footprint where atleast one side measures approximately 2000 μm or less, such asapproximately 1150 μm or less, approximately 900 μm or less,approximately 700 μm or less, approximately 600 μm or less,approximately 500 μm or less, approximately 400 μm or less,approximately 300 μm or less, approximately 200 μm or less,approximately 100 μm or less, and/or combinations thereof where multipleLED chips 18 are used. Any dimension of LED chip 18 is contemplated.

As FIG. 1D illustrates, LED chips 18 can be electrically connected totraces 16 via wirebonds 20. For illustration purposes, horizontallystructured LED chips 18 are illustrated, where both the anode and thecathode can be disposed on the upper surface of each chip 18 in the formof two bond pads, each connected to a different trace 16 via wirebonds20. However, both contacts (e.g., the anode and cathode) could bedisposed on a bottom surface of LED chips 18 and/or on opposing top andbottom surfaces as well.

In some aspects, wirebonds 20 can comprise any suitable electricallyconductive material such as Au, Ag, Al, Sn, Cu, alloys thereof, and/orcombinations thereof. It is understood that in other aspects, acomponent according to the present subject matter can be provided withan optional electrostatic discharge (ESD) protection device (not shown)reversed biased with respect to LED chips 18. Where used, the ESDprotection device can comprise a Zener diode, a surface mount varistor,a lateral Si diode, and/or another LED chip that can be reversed biasedwith respect to one or more other LED chips 18.

Notably, an optical element or optical material can be provided overcomponent 10. In some aspects, an optical element or material cancomprise encapsulant 22 that can be provided and applied substantiallyentirely over substrate 12, traces 16, LED chips 18, and wirebonds 20 asfurther illustrated by FIG. 1D. That is, LED chips 18 supported thereoncan be encapsulated in one batch encapsulation process rather than by asingle encapsulation process and substrate 12 can be substantiallycovered with at least one large optical element or layer of encapsulant22. In some aspects, encapsulant 22 can comprise a single and continuouslayer or layers of material over substrate 12, prior to singulation ofcomponent 10 into individual devices. That is, the volume of encapsulant22 can be large upon application. In general an application ofencapsulant 22 can be anywhere from just covering the surface of the LEDchips 16 and wirebonds (e.g., the thinnest possible layer for providingmechanical protection). In other aspects, encapsulant 22 can be appliedfor low profile applications to aspect ratios of approximately 15× theheight of the chip which has been shown to improve light extraction.Height of encapsulation 22 can affect beam shaping of the final productso there could be applications that require approximately a 30× aspectratio. In general, about 800 μm of encapsulation 22 height is consideredtypical.

In some aspects, encapsulant 22 can provide both environmental and/ormechanical protection of LED chips 18, wirebonds 20, and traces 16. Anoptional layer of wavelength conversion material (not shown) such as oneor more phosphoric or lumiphoric materials can be applied directly overthe one or more LED chips 18 and/or over one or more portions ofsubstrate 12 and traces 16 prior to application of encapsulant 22. Inother aspects, the wavelength conversion material can be provided and/ormixed within encapsulant 22, such that upon depositing encapsulant thewavelength conversion material is also deposited. In further aspects,encapsulant 22 can be devoid of a wavelength conversion material. Infurther aspects, wavelength conversion material can be provided in areflective material (e.g., 26 FIG. 2E), where reflective material isused. In some aspects, wavelength conversion material can be applied inencapsulant 22 and/or the reflective material (26, FIG. 2E), wherereflective material is used. In some aspects, a wavelength conversionmaterial, such as one more phosphors or lumiphors can provide forimproved color mixing and provision of truer neutral white light havinga truer, improved color rendering, and/or and what is perceived as atrue or neutral white color output, where desired.

In some aspects, batch processing and batch encapsulating multiple LEDchips 18 of substrate 12, prior to singulation can improve both the costand the ease of production with regard to components 10. For example, insome aspects cost can be improved as the time, tools, materials, and/orother costs associated with individually molding lenses over substrate12 can be obviated. In further aspects, any potential sticking and/orother processing defects associated with individually dispensingencapsulant multiple times over multiple LED chips can be eliminated.Notably, dispensing encapsulant in at least one single layer oversubstrate 12 and LED chips 18 supported thereon can advantageouslyimprove (e.g., decrease) a manufacturing time as well. In some aspects,encapsulant 22 can be cured after dispensing over substrate 12 and LEDchips 16 disposed thereon. As described below, more than one layer ofencapsulant 22 can be provided.

FIGS. 2A to 2F illustrate side views of device 10, and illustrate one ormore processing steps occurring just prior to, or just after applyingand curing encapsulant 22. For illustration purposes, substrate 12 isshown as comprising a substantially square or rectangularcross-sectional shape. However, any other non-rectangular shape is alsocontemplated herein. Notably, substrates 12 described herein cancomprise the building block of customized SMD type emitter componentsand/or devices described herein. A multitude of different customizedcomponents, having, for example, customized reflectors, customized sidewalls, shaped or faceted encapsulant or optical elements providedthereon, and any type/shape/size/number/color of LED chips for producinga desired color point can be provided and/or easily modified without thetime and/or expense associated with creating custom fabricated or moldedcomponents.

As the broken lines in FIG. 2A illustrate, encapsulant 22 can optionallycomprise one or more multiple layers, such as layers I, II, and III. Insome aspects, each layer can be substantially optically clear. In otheraspects each different layer can comprise a different concentrationand/or color of a wavelength conversion material (e.g., a phosphor orlumiphor). In further aspects, the layers I, II, and III can compriseone or more combinations of any number of optically clear layers and anynumber of layers containing phosphor. Further, instead of and/or inaddition to phosphor, one or more layers I, II, and III can comprisefiltering particles or materials, diffusing particles or materials,and/or reflective particles or materials. In some aspects, each layer I,II, and III can be individually applied/deposited and individuallycured. In other aspects, each layer within the stack of layers can becured at the same time. For illustration purposes only, the broken linesindicate three different layers I, II, and III, however, a single layer,two layers, or more than three layers of encapsulant, with or withoutphosphor(s) or other materials, can be provided and are contemplatedherein.

Notably, the large area of encapsulant 22, which extends substantiallyto outermost edges of substrate 12, can be dispensed, molded in onelarge mold, or applied via spray techniques. In some aspects,encapsulant 22 can be applied in via a coating method such as, forexample, via spin coating. Notably, batch encapsulation can minimizecolor scattering and improve color consistency by reducing “settling” or“settling down” of the phosphors contained therein. Settling can occurin conventional components over time where encapsulant is individuallyapplied over a plurality of LED chips prior to curing. Thus, batchencapsulation can advantageously result in quicker processing times,contributing to higher production yields, lower production cost, andhigher brightness within devices singulated from substrate 12 (50, FIG.5). Batch encapsulation can also provide for a stable color targetingand/or stable color across individual devices (e.g., FIG. 5) uponsingulation from substrate.

FIG. 2B illustrates another novel aspect of light emitter devices,components, and related methods described herein. As FIG. 2Billustrates, an ablation tool T can be used to ablate material fromcomponent 10 after encapsulant 22 has hardened or cured. In someaspects, material of component 10 can be scribed, where ablation tool Tcan provide scribe marks 24 in portions of component 10. Scribe marks 24can penetrate and remove portions of encapsulant 22. Notably, scribemarks 24 can also penetrate portions of substrate 12, forming one ormore recessed portions or ledges L in substrate 12. In some aspects,ledges L provide a space for one or more portions of reflective material(e.g., a reflector or reflective wall) to be attached as described inFIG. 5. In some aspects, penetration into portions of substrate 12 canresult in better adhesion between the reflector or reflective material(26, FIG. 2E) and substrate 12. In some aspects, ablation tool T canform a plurality if trenches, gaps, or scribe marks 24 between adjacentLED chips 18 supported by and/or mounted to substrate 12. Thus, scribemarks 24 can be formed between what will be individual light emitterdevices (e.g., 50, FIG. 5), upon singulation.

In further aspects, devices described herein can be devoid of an outerreflector, an outer layer of reflective material, and/or a reflectivewall. That is, in some aspects devices can be singulated without using areflective material, for example, individual devices can be singulatedfrom component 10 along the broken lines denoted X in FIG. 2B. In someaspects, prior to and after singulation, components and devices cancomprise an ablated edge, generally designated 28. Ablated edge 28 ofdevices and components can comprise a portion of encapsulant 22 and aportion of substrate 12, where encapsulant 22 is flush against thesurface or side of substrate 12 over which LED chip 18 is mounted. Insome aspects, upon singulation lower recessed portion or ledge L of thesubstrate can extend below ablated edge 28. This can be advantageous aslight emitted by LED chips 18 is Lambertian, and therefore when light isemitted below the LED chip 18 it can advantageously be reflected back upand out of the device via the lower ledge L of substrate 12. As notedabove, substrate 12 can comprise a highly reflective ceramic material.In some aspects, substrate can comprise a highly reflective whitematerial.

In some aspects, ablation tool T can comprise any suitable tool forremoving and/or ablating material. For example, in some aspects ablationtool T comprises at least one dicing blade, a saw blade, a laser toolfor laser scribing, or a tool for performing laser ablation technology.Notably, a kerf width of ablation tool T for scribing should be largerthan a kerf width of a singulation tool for singulating devices (T₂,FIG. 2F). For example, if a singulation tool has a kerf width ofapproximately 0.2 mm, then the kerf width of ablation tool T should beat least approximately 0.6 mm. In some aspects, the kerf width ofablation T tool can correspond to a width of scribe marks 24. Stateddifferently, scribe marks 24 can be larger in width, and have morematerial removed than during singulation of individual packages, whichwill remove minimal material of negligible width. Ablation tool T cancomprise any size and/or shape, and can be configured to provide scribemarks 24 having substantially straight side walls, substantiallyparallel side walls, or substantially beveled/tapered side walls.

As FIG. 2C illustrates, scribe marks may have a shallower depth thanthat shown in FIG. 2B. That is, in some aspects scribe marks may onlypenetrate portions of encapsulant 22 (e.g., cured) and without extendinginto portions of substrate 12. A depth and/or thickness of scribe marks24, which can ultimately form side walls of devices upon singulation,can be customized, where desired.

FIG. 2D illustrates an example of an ablation tool T having taperedsides which can provide scribe marks 24 having substantially taperedinner walls. As FIG. 2D illustrates, inner walls of scribe marks 24 cantaper inwardly and/or outwardly away from each other forming asubstantially V-shaped trench between adjacent LED chips 18. In someaspects, devices having specific beam patterns are desired. This can beachieved in part by providing non-parallel scribe marks 24. Scribe marks24 can be customized in shape, where desired. In some aspects, scribemarks 24 can be tapered, shaped, partially curved, and/or multi-faceted.Any sectional shape of scribe marks 24 can be produced and iscontemplated herein.

In some aspects, individual packages or devices can be singulated fromsubstrate 12 directly after formation of scribe marks 24. In otheraspects, scribe marks 24 can be at least partially filled with areflective material and/or a reflector. That is, scribe marks 24 ofcomponent 10 can be at least partially filled and component 10 can besubsequently be diced, sawn, or separated via a laser, for singulationof individual devices (50, FIG. 5) after providing the reflectivematerial.

FIG. 2E illustrates an optional step of applying or providing areflective material 26 and/or a reflector to at least partially or fullyfill portions of scribe marks 24. In some aspects, a small wall (e.g., asmall amount) of reflective material 26 can be added first via a screenprinting process. In some aspects, reflective material 26 can comprise areflective wall at least partially aligned over and/or attached torecessed portions or ledges L of substrate 12. At least a portion of thereflective material can be disposed above a height or upper surface ofLED chip 18 and at least a portion can be disposed below a level, suchas the bottom surface level, of LED chip 18. This can be advantageous,as any light emitted below LED chip can be reflected back out via lowerportion of material 26. In some aspects reflective material 26 cancomprise a highly reflective material which can be white, transparent,optically clear, silver, and/or silver-white in color. In some aspects,reflective material 26 can comprise silicone, a high refractive indexsilicone material, or any suitable thermoplastic material such aspolyphthalamide (PPA), a liquid crystal polymer (LCP), titanium dioxide(TiO₂), a silicone having reflective particles dispersed there such as,for example, particles of Al₂O₃, TiO₂, BaSO₄, ZrO₂, and/or AlN. In someaspects, a wavelength conversion material such as a phosphor or lumiphorcan be contained within reflective material 26. In some aspects,reflective material can comprise a very hard silicone or epoxy, asportions of reflector material 26 can form a side wall of singulateddevices (e.g., FIG. 5). In further aspects, filtering particles ormaterials and/or diffusing particles or materials can be provided withinportions of scribe marks 24, such that singulated devices emit filteredor diffused light of any desired wavelength or color point. Notably,reflective material 26 can be customized, where desired, to contain anyamount or composition of reflective, wavelength conversion, filtering,and/or diffusing materials.

Where used, wavelength conversion material can be contained either inencapsulant 22 and/or reflective material 24, or both. In some aspects,wavelength conversion material can comprise one or more phosphors orlumiphors (e.g., yellow, red, and/or green phosphor) which can beactivated by light emitted from the one or more LED chips 18. In someaspects, wavelength conversion material can be provided when encapsulant22 and/or reflective material 26 are in liquid form, and can bedispersed therein as such materials harden or cure.

In some aspects, reflective material 26 can be applied in liquid formand allowed to cure or harden. In other aspects, reflective material 26can comprise a solid material which can be inserted into scribe marks24, and fixedly held therein via silicone or an adhesive.

Notably, in some aspects, a non-reflective material can be applied inscribe marks 24 over recessed portions or ledges L. The non-reflectivematerial disposed in scribe marks 24 can form a lateral side wall of adevice upon singulation, similar to that described in FIG. 5. Notably,the material applied, dispensed, inserted, or otherwise deposited withinportions of scribe marks 24 can be customized. In some aspects, thematerial applied or deposited in scribe marks can be adapted to blocklight, adapted to absorb light, adapted to filter light, comprise adichroic filter (e.g., for selectively passing select wavelengths oflight), a diffuser, or a material adapted to diffuse light. Any suitablematerial that can be reflective or non-reflective can be provided inscribe marks 24. In other aspects, scribe marks can be devoid of anymaterial, and devices can be singulated from component 10 after scribingand/or encapsulating. In further aspects, a non-reflective material canbe combined with a reflective material and applied or inserted withinscribe marks 24 over recessed portions or ledges L.

As FIG. 2F illustrates, after insertion of optional reflective material26, a singulation tool T₂ can be used to singulate individual devicesalong lines designated 1 to N, where N is any integer>1. Singulationtool T₂ can comprise a dicing (e.g., saw) blade or a laser tool whichcan comprise a fine width and/or a smaller kerf width than the width ofreflective material 26 and/or scribe marks (24, FIG. 2C). Thus,reflective material 26 can form exterior walls of each device uponsingulation. Where reflective material 26 is not used, encapsulant 22can at least partially form exterior walls of singulated devices. Asindicated in FIG. 2D, encapsulant 22 can be provided with shaped wallsfor producing or shaping light into a desired beam pattern. Singulationtool T₂ can be used to singulate individual devices (50, FIG. 5) fromcomponent 10, and from large panel substrate 12. For illustrationpurposes, singulated light emitter devices (50, FIG. 5) are shown ascontaining one LED chip 18, however, devices containing two or more LEDchips 18 are also contemplated and can be provided herein and subjectedto batch encapsulation and/or any other substrate based batch processingtechniques described herein.

As noted above, the broken lines along and through substrate 12 in FIG.2F indicate lines along which component 10 can be scribed, sawn, cut,etched, broken, and/or otherwise physically separated, for providing orforming individual packages or devices (e.g., 50, FIG. 5). Individualsubstrate based packages or devices can be customized with respect tothe size, shape, or number of LED chips 18, the shape of exterior wallsand/or shape of encapsulant 22, a number of encapsulant 22 layers,materials provided within encapsulant 22 and/or reflective material 26.In some aspects, component 10 and resultant devices described herein canbe devoid of reflective material 26. Notably, components describedherein can provide customized devices that are substrate based and canbe provided at improved costs, lower processing times, fewer processingsteps, and/or via batch processing techniques.

FIGS. 3A to 3E illustrate another substrate based component, generallydesignated 30. Component 30 can be similar to component 10, however,FIGS. 3A to 3E illustrate different aspects and/or features associatedwith components and devices provided herein. FIG. 3A illustratescomponent 30 comprising a substrate 32, a plurality of LED chips 34disposed over substrate 32, and the plurality of LED chips 34 beingwirebonded to traces (FIG. 1B) via wirebonds 36. Traces can be presentin device 30 but may not be visible in the side views; as such featurescan be very thin compared to substrate 32. A plurality of pairs ofbottom contacts 35 can be disposed over a backside or bottom surface ofsubstrate 32. In some aspects, bottom contacts 35 can comprise a metalor metal alloy. In some aspects, bottom contacts 35 can be configuredfor surface mounting and/or directly connecting to and/or electricallyand thermally connecting with external heat sinks or circuit componentssuch as a PCB or a MCPCB (not shown). In some aspects, bottom contacts35 can electrically communicate with traces using vias (e.g., conduits)through substrate 32. Substrate 32 can comprise a panel substrate ofmaterial. In some aspects, it is desirable to provide a substrate 32that is highly reflective to visible light (e.g., greater than about90%), and which can provide conduction of heat as well provide asmechanical support. In some aspects, non-metallic and/or ceramic (e.g.,HTCC and LTCC) materials containing Al₂O₃ exhibit such desirablequalities. Accordingly, substrate 32 can comprise a ceramic based bodyof material such as Al₂O₃ and/or containing Al₂O₃. However, metallic,composite, plastic, and flame retardant substrates 32 can also beprovided.

In some aspects, substrate 32 can comprise a ceramic body that can becast from LTCC materials or HTCC materials and/or using relatedprocesses. In one embodiment, substrate 32 can be cast from a thin greenceramic tape and subsequently fired. Where used, the ceramic tape cancomprise any ceramic filler material known in the art, for example,substrate 33 can comprise a glass ceramic, such as Al₂O₃ or AlN having0.3 to 0.5 weight percent of glass frits, as described above. The glassfrits can be used as a binder and/or sintering inhibitor within theceramic tape when the tape is fired.

In some aspects, substrate 32 can be produced by thin- or thick-filmprocessing techniques available at and including products available fromCoorsTek, headquartered in Golden, Colo. Such substrates 32 canoptionally be fired along with other materials (e.g., zirconia, ZrO₂) tofurther improve optical and mechanical properties.

In some aspects, LED chips 34 can be mounted (e.g., die attached) oversubstrate 32 after firing and/or sintering. LED chips 34 can be dieattached using any suitable material capable of causing LED chips 34 toadhere to substrate 32. For example, LED chips 34 can be die attachedusing solder, epoxy, paste, glue, silicone, flux materials, eutecticmaterials, or any other suitable adhesive materials.

Still referring to FIG. 3A, LED chips 34 can be electrically connectedto traces via wirebonds 36 proximate a same time. LED chips 34 can alsobe encapsulated proximate a same time via a batch encapsulation processas previously described. An encapsulant 38 can be applied via spraying,dispensing, or using one large, single mold. In some aspects,encapsulant 38 can form a continuous layer over LED chips 34, wirebonds36, traces (e.g., FIG. 1A, may not be visible in side view) substrate32, and bottom contacts 35. Encapsulant 38 can be devoid of a phosphor,or one or more phosphors can be dispersed within encapsulant 38. Morethan one layer of encapsulant 38 can be provided. In some aspects, aphosphor layer can be sprayed or applied to component 30 prior toencapsulation, where desired.

Notably, a tape, mask, or masking layer can be applied after formationan initial layer of encapsulant. That is, a mask 40 can be applied overencapsulant 38 after encapsulant has been allowed to harden or cure. Insome aspects, mask 40 can be formed and/or applied via hot laminationtechnology. In other aspects, mask 40 can comprise a polymer tape, asticker, or an adhesive material. Mask 40 can comprise any polymermaterial such as polyimide (PI), with or without adhesive materials.Mask 40 can be adapted to provide a barrier over encapsulant 38 duringsubsequent processing steps, and can provide a place holder for one ormore subsequent layers applied over encapsulant 38. In some aspects, thesubsequent layer(s) may be brittle and/or susceptible to peeling ordegrading during scribing. In other aspects, mask 40 can assist and/orimprove application of reflective layer 44 as described below.

As FIG. 3B illustrates, one or more scribe marks 42 can be provided inportions of mask 40. Scribe marks 42 can penetrate portions ofencapsulant 38 and optionally portions of substrate 32. Scribe marks 42can be formed with a saw blade, a laser beam, or using any other dicing,separating, or ablation techniques.

FIG. 3A illustrates formation and/or application of a reflectivematerial 44 within previously provided scribe marks. In some aspects,reflective material 44 can completely fill the area created by scribemarks. In other aspects, reflective material 44 can only partially coatportions of scribe marks (e.g. FIG. 4A). In further aspects, more thanone reflective material 44 can be applied within scribe marks 42.

In some aspects, provision of reflective material 44 (or optionally afilter material or diffusing material) can also be performed via a batchprocess, where multiple reflective walls can be created, provided, orestablished at a same time. For example, in some aspects mask 40 canprevent filling material from being disposed over, from sticking to,and/or from being adhesively applied over portions of encapsulant 38.For example, mask 40 can be applied over encapsulant 38 afterencapsulant 38 has hardened. After scribing (e.g., FIG. 3B), component30 can be placed under a vacuum. Silicone or other reflective material44 can be applied over entire component 10, and a vacuum can be applied.The silicone or reflective material 44 can flow into and fill scribemarks 42 via capillary action. Thus, reflective material 44 can beapplied over entire component (e.g., as a batch) and a vacuum can beused to pull, place, or cause material 44 to become disposed withinportions of scribe marks (42, FIG. 3B).

As FIG. 3D illustrates, mask 40 can be removed after optional formationof side walls comprised of reflective material 44. One or more gaps 46having a thickness t can be provided upon removal of mask 40. As FIG. 3Eillustrates, a second layer of material 48 can be provided in gaps 46(FIG. 3D). Second layer of material 48 can comprise an optically clearlayer of material, or it can contain one or more phosphors, filteringmaterials, reflective materials, scattering material, or diffusingmaterial as denoted by the shaded appearance. Second layer of material48 can be the same material as encapsulant 38 or second layer ofmaterial 48 can comprise a different material or materials thanencapsulant 38. Notably, second layer of material 48 can be sprayed,dispensed, or applied to component 30 at a same time and over themultiple LED chips 34 as a batch or in a batch application or process.Application of multiple sections of second layer of material 48 at thesame over component 30 can advantageously be performed in less time thanapplication of multiple single portions. The decreased processing timecan be advantageous as phosphor, where used within layer 48, can beprevented from settling over time.

In some aspects, LED chips 34 can be configured to activate a yellow, ared, a blue, and/or green phosphor (not shown) disposed either directlyover each LED chip 34, disposed within reflective material 44, disposedwithin encapsulant 36, and/or disposed within second layer of material48 for producing neutral, cool, and/or warm white output. Single ormultiple LED chips 34 can be used alone or in combination with devicesand components described herein.

As noted above with respect to FIG. 3C, reflective material 44 can beconfigured to fully fill scribe marks (42, FIG. 3B) or only partiallyfill scribe marks 42. FIGS. 4A to 4D illustrate various configurationsof reflective material within scribe mark 42. Notably, the placement,amount, thickness, concentration, and/or other aspects pertaining toreflective marital 44 can be customized in some aspects.

As FIG. 4A illustrates, in some aspects reflective material 44 can beconfigured to coat only a portion of scribe mark 42. Reflective material44 can comprise a thin layer and may contain a phosphor or phosphors,scattering particles, diffusing particles, filtering particles, etc. AsFIG. 4B illustrates in some aspects, reflective material 44 can comprisemore than one portion, layer, or material. That is, reflective material44 can comprise a composite layer or structure. A first layer ofreflective material 44A can comprise a coating applied over inner wallsof and/or a bottom surface of scribe mark. A second layer of material44B, can be applied inside of and/or adjacent first layer 44A. In someaspects, second layer of reflective material 44B can be at leastpartially nested in first layer of reflective material 44A. Thematerials forming the first and second layers 44A and 44B can comprisemultiple layers of a same material, or layers 44A and 44B can comprisedifferent materials. More than two layers and/or materials are alsocontemplated. In some aspects, more than two layers of material can bevertically stacked within scribe marks. Material 44 can comprise anymaterial(s), any number of layers, and any configuration. Notably,reflective material 44 can be varied, and therefore, can provide easy tomanufacture customized devices at a lower cost than other known devices.

As FIG. 4C illustrates, in some aspects reflective material 44 cancomprise a single layer having a substantially uniform amount ofreflective particles and/or phosphor materials disposed therein asindicated by the shading. As FIG. 4D illustrates a concentration ofreflective particles and/or phosphor materials can be varied. As FIG. 4Dillustrates, a more dense region 44C of phosphors or particles can beapplied over a less dense region 44D. Concentrations can be varied alonga length of reflector material 44 to provide any desired light output,color point, and beam shape.

In some aspects, phosphors disposed within reflective material cancomprise phosphors or lumiphors (e.g., yellow, red, blue, and/or greenphosphor) which can be activated by light emitted from the one or moreLED chips 34 (FIG. 3E). In some aspects, wavelength conversion material(e.g., phosphor) can be provided when reflector material 44 is in aliquid form, and can be uniformly or non-uniformly dispersed therein.After application, reflector material 44 can be allowed to harden andcure. After hardening, reflector material 44 and substrate 32 can bediced and individual packages or devices can be singulated.

FIG. 5 illustrates a light emitter device generally designated 50, whichcan be provided and produced according to components and methodsdescribed herein. For example, when component 10 is singulated or dicedalong broken lines (FIG. 2F), multiple singulated packages or devices 50can be provided. Singulated device 50 can be substrate based, that is,fully processed over a large panel substrate 12 (FIG. 1A) and thensubsequently singulated into individual devices 50 over individualsmaller portions of substrate 12. In some aspects, a plurality ofdevices can be die-attached, wirebonded, and encapsulated as a batchesfor reducing processing times and lowering production costs. This hasalso unexpectedly led to a significantly more stable color point forindividual devices singulated from components described herein, as thereduced processing times prevent sticking of the encapsulant and/orprevent settling of phosphors contained within the encapsulant.

As FIG. 5 illustrates, reflective material 26 can comprise a reflectivelateral side wall of device 50. Reflective material 26 can be at leastpartially disposed in and on recessed portion or ledge L of thesubstrate 12. The ledge L can be provided below a level of LED chip 18.In some aspects, a first portion of the reflective lateral side wall orreflective material, denoted 46′ can be disposed above a height of LEDchip 18, and a second portion of the reflective material denoted 46″ canbe disposed below a level of LED chip 18, and flush against ledge L.This can be advantageous, as LED chips 18 can emit Lambertian patternsof light, thus, any light emitted below LED chip can be reflected backout via lower portion of material 46″. Notably, such device can compriseminimal features batch processed in minimal steps, resulting in asuperior, improved lighting device.

In some aspects, LED chips 18 can be configured to activate a yellow, ared, a blue, and/or green phosphor (not shown) disposed either directlyover each LED chip 18, disposed within encapsulant 22, and/or disposedwithin reflective material 26 for producing neutral, cool, and/or warmwhite output. For illustration purposes only, one LED chip 18 isindicated per device 50. However, two or more LED chips 18 can beprovided in one device 50. Where multiple LED chips 18 are used indevice 50, each can comprise a same color. In other aspects, each LEDchip 18 can comprise a different color selected from the group of blue,blue shifted yellow (BSY), cyan, green, red, yellow, red-orange, oramber. Any color and/or colors of LED chip 18 can be provided.

In some aspects, LED chips 18 can be primarily blue and configured toactivate a yellow phosphor. In other aspects, LED chips 18 can beprimarily red. LED chips 18 can be used together within device 50, forexample, a primarily blue LED chip or chips 18 can be used incombination with a primarily red LED chip or chips 18. In some aspects,a primarily red LED chip 18 can be disposed below a phosphor (e.g.,sprayed over chip or disposed within encapsulant or reflective material)for mixing with light of other LED chips and/or phosphors to producewarm white output.

Notably, in some aspects encapsulant 22 does not require molding. Thatis, in some aspects, encapsulant 22 can comprise a silicone matrix,encapsulant, or plastic material which can be deposited or dispenseddirectly over substrate 12 over entire component and over multipledevices at approximately the same time. In some aspects, a single largemold can be used. In other aspects, encapsulant 22 can be dispensed orsprayed. Thus, encapsulant can be provided as a batch over devices 50,prior to singulation, without the time or expense of having to overmoldmultiple lenses.

FIGS. 6A and 6B illustrate further light emitter packages or devices,generally designated 60, which can be produced from components andrelated methods described herein. Device 60 can be processed over alarge panel substrate 62 and individually singulated at the end of aprocess via dicing, sawing, breaking, using a laser beam, etc. Device 60can comprise an LED chip 64 electrically connected to one or more vias68 using wirebonds 66. As discussed above with respect to FIG. 1A,multiple vias 68 can be provided in a component substrate 62, prior tosingulation of the component substrate 62 into multiple devices. Atleast one electrical trace 70 can be optionally plated over vias 68.

FIG. 6B illustrates a backside of device 60, which opposes the side towhich LED chip 64 is attached. Notably, in some aspects first and secondbottom contacts 72 and 74 can be applied to a bottom surface ofsubstrate 62 prior to singulation. First and second bottom contacts 72and 74 can connected to upper traces 16 (e.g., FIG. 1B) using vias,wrap-around (side) traces or contacts, flexible circuitry, or any otherdesired configuration. First and second bottom contacts 72 and 74 cantransmit electrical current into top traces using vias 68, which cantransmit electrical current into LED chip 64 via wirebonds 66.

In some aspects, a plurality of bottom contacts can be applied as abatch over substrate 62 using a mask (M, FIG. 1B), stencil, etc.,similar to applying traces 16 (FIG. 1B), as previously described. Insome aspects, bottom contacts 72 and 74 can comprise a metal or metalalloy. In some aspects, light emitter device 60 can comprise a substratebased device configured for surface mount device (SMD) applications.SMDs can comprise at least two bottom contacts for directly connectingto and/or electrically and thermally connecting with external heat sinksor circuit components such as a PCB or a MCPCB. In some aspects, device60 can be singulated from a large a non-metallic substrate, similar topreviously described substrate 12 (FIG. 1A). In some aspects, substratesaccording to any of the previously described embodiments can have adesirable thermal conductivity. For example and without limitation,substrates described herein can comprise a thermal conductivity ofgreater than 5 W/mK, greater than 10 W/mK, greater than 50 W/mK, greaterthan 100 W/mK, greater than 150 W/mK, or greater than 200 W/mK. In moreparticular aspects, the thermal conductivity of the substrate can beapproximately 20 W/mK (+ or −5 W/mK), such as for when the substratecomprises alumina, or the thermal conductivity of the substrate can beapproximately 170 W/mK (+ or −5 W/mK), such as for when the substratecomprises AlN. In alternative aspects, metallic, polymeric, plastic, orcomposite substrates can be provided.

As FIG. 6B illustrates, in some aspects, first and second bottomelectrical contacts 72 and 74 can electrically communicate to respectiveLED chip 64 using one or more internally disposed thru-holes or vias 68.Vias 68 can extend internally within a portion of substrate 62 dependingon how placed within panel (e.g., FIG. 1A) and how panel is subdividedinto individual devices. For example, vias 68 can be fully internal to,intact, and/or fully contained within portions of substrate 62 as shown,or in other aspects, vias 68 can be apportioned and exposed such thatthey are disposed along one or more external sides of substrate 62. Vias68 can comprise conduits for transferring electrical current aboutsubstrate and into respective LED chip 64 within devices 60.

In some aspects, first and second electrical contacts 72 and 74 can bedeposited via electroplating and/or electroless plating processes. Insome aspects, first and second electrical contacts 72 and 74 cancomprise one or more layers of material, such as one or more layers ofAu, Sn, Ti, Ag, Cu, Pd, ENIG, and/or any alloy or combination thereof.First and second electrical contacts 72 and 74 can also be deposited viaphysical deposition methods, sputtering, screen-printing, and/or anyother methods previously described above.

Notably, first and second electrical contacts 72 and 74 can comprisedifferent sizes and/or shapes. For example, in some aspects firstelectrical contact 72 can comprise a V-shaped notch for indicatingelectrical polarity. In some aspects, the V-shaped notch indicates acathode. In other aspects, the V-shaped notch can indicate an anode.Thus, time and expense associated with otherwise marking the component(e.g., via scribing, notching, etc.) can be obviated.

In some aspects, top trace 70 (FIG. 6A) and/or first and secondelectrical contacts 72 and 74 can comprise metallic bodies or portionsof material that can be attached to substrate 62 via adhesive, solder,glue, epoxy, paste, silicone, or any other material. Substrate 62 cancomprise ceramic, metallic, polymeric, composite, FR4, or any othersuitable substrate having traces attached thereto. In further aspects,top trace 70 and first and second electrical contacts 72 and 74 cancomprise metallic bodies or portions of material that can be pressedinto a green ceramic tape and then co-fired with substrate 62, as abatch (e.g., as an un-singulated substrate panel, FIG. 1A). In yetfurther aspects, first and second electrical contacts 72 and 74 and/ortop trace 70 be applied via a conductive paste screen-printed over anHTCC or LTCC panel substrate and fired. In some aspects, a conductive Agpaste can be used such as silver paste #7095 available from DuPontElectronics.

In some aspects, first and second electrical contacts 72 and 74 can bemounted over and electrically or thermally communicate with an externalheat sink or power source (not shown). In some aspects, first and secondelectrical contacts 72 and 74 can be configured to pass electricalsignal or current from the outside power source (not shown) such as acircuit board, a PCB, a MCPCB, or other electrical source into the oneor more LED chips 64 by passing electrical current about or throughsubstrate 62 using vias 68.

Portions of first and second electrical contacts 72 and 74 can besoldered, welded, glued, or otherwise physically, electrically, and/orthermally attached to the external power source (not shown). LED chips64 can illuminate upon receiving electrical current passed betweenrespective top and bottom electrical contacts or traces.

In some aspects, singulated devices can have a submount or substrate 62having a length and a width of approximately 5 mm×5 mm or less,approximately 4 mm×4 mm or less, or approximately 3 mm×3 mm or less. Insome aspects, however, any customized size of device having any numberof LED chips 64 can be provided

Although not shown, device 60 can comprise an optional reflector (e.g.,26, FIG. 5) and an optical element including one, two, or more than twolayers of encapsulant (22, FIG. 5). Notably, the technology describedherein allows for a substantially flat panel substrate to be formed intoa multitude of different and/or customized packages or componentswithout having to incur expenses associated with custom fabricatedpackages. Notably, this technology also allows for provision of opticalelements or encapsulant which do not require formation of and/orindividually molding such components. Notably, varying the size, shape,number, placement, and/or location of any one of the traces, vias 68,LED chips 64, reflectors, and/or layers/composition of encapsulant canallow for a multitude of differently sized, shaped, and/or customizedcolor components and devices to be formed over substrates describedherein. In addition, as noted above, one or more optional ESD protectiondevices can be provided in any configuration over devices and componentsdescribed herein, where desired.

FIG. 7 is a flow chart 80 illustrating exemplary steps that can beutilized for providing substrate based light emitter components anddevices according to the disclosure herein. Step 82 comprises providinga panel or substrate. Substrate can comprise any size or dimension andany shape. In some aspects, substrate can be contained on a reel, anddevices can subsequently be built (e.g., batch processed) and singulatedtherefrom. Substrates described herein can comprise any suitable size,shape, and/or thickness, and such dimensions can be customized wheredesired. As described herein, the substrate can comprise a metallic,plastic, polymeric, composite, flame retardant (e.g., FR-4),non-metallic, or ceramic material. Combinations of such materials canalso be used and provided as a substrate.

In some aspects, providing a highly reflective, white, substantiallynon-absorbing substrate is desired. In some aspects, a ceramic substrateis desired. In some aspects, substrates provided herein can comprise AlNor Al₂O₃. In some aspects, a substrate that is approximately 2 inches(″)×4″ can be provided such that approximately 420 devices (e.g., havinga substrate of approximately 3 mm×3 mm) can be formed or singulatedtherefrom. In other aspects, a size of individual devices singulatedtherefrom can be customized.

One or more optional steps can be performed after provision of a panelor substrate. For example, one or more vias can be formed in thesubstrate and multiple traces or contacts can be formed on opposingsurfaces. In some aspects, top traces and bottom contacts can beprovided via sputtering, plating, masking, screen-printing, stenciling,physical deposition, or electroless deposition techniques.

In step 84, a plurality of light emitter chips, such as LED chips, canbe provided over substrate and die attached thereto. LED chips cancomprise any size, shape, build, structure, number, and/or color. Insome aspects, a plurality of LED chips can be provided in an array overthe panel. In some aspects, at least one LED chip can be providedbetween at least two formed vias and/or between at least two traces. Inother aspects, each LED chip can be directly attached over vias and/ortraces. In some aspects, each LED chip can be attached to the substratevia a bonding material such as one comprising epoxy, silicone, solder,flux, paste, etc., or combinations thereof. In some aspects, step 84 canbe repeated for die attaching optional ESD chips, where desired.

Notably in some aspects, a plurality of devices can be provided over thesubstrate. The plurality of devices can each include die attached LEDchips provided in step 84. The devices can further comprise tracesand/or bottom contacts adapted to be surface mounted to an external heatsink or substrate (e.g., MCPCB or PCB).

After performing step 84, the LED chips and/or ESD chips can bewirebonded to traces, such as deposited electrical contacts or exposedmetallic vias. In other aspects, direct attached LED chips can beprovided or mounted directly over traces such that wirebonds are notrequired. In some aspects, wirebonds can comprise a positive loop whichcurves upwardly between LED chip and traces. In other aspects, wirebondscan comprise a negative loop which curves at least partially downwardsbetween LED chips and traces.

In step 86, the panel or substrate can be encapsulated such that eachLED chip is encapsulated as a batch. In some aspects, a top surface ofthe panel or substrate can be encapsulated. Encapsulant can be sprayed,dispensed, molded via a large mold, etc., such that the need toindividually mold one lens over each LED chip is obviated. Encapsulantcan be applied in one or more layers. In some aspects, a phosphor can besprayed or applied over LED chips and/or portions of components prior toencapsulating. In other aspects, encapsulant can comprise one or morephosphors. The number of layers and composition of encapsulant can becustomized depending upon a desired color point. In some aspects,encapsulant can comprise reflective particles, filtering materials, ordiffusing materials, where desired. The encapsulant can subsequently behardened or cured.

In step 87, a lateral side wall can be created, and can comprise eitherablating or scribing material (e.g., substrate only, encapsulant only,or a combination thereof, or any other portion of components describedherein) from a front side or a back side.

One or more optional steps can be performed after the encapsulation hashardened. In some aspects a tape or mask can be applied prior toscribing. In some aspects, the substrate based component can be scribedthrough a portion of the encapsulant, through a portion of the optionaltape or mask, and optionally through a portion of the substrate.

In addition to scribing, a reflective material can, but does not have tobe provided in the trenches or scribe marks resultant from scribing. Thereflective material can include reflective particles, filteringparticles, diffusing particles, or phosphoric material(s). Thereflective material can be dispensed or applied as a batch over thesubstrate component using a vacuum where a tape or mask is used. Inother aspects, reflective material can be dispensed or coated withinscribe marks.

In step 88, individual packages or devices can be singulated from thepanel or substrate into individual substrate based devices for example,by sawing, cutting, shearing, dicing, or breaking portions of thesubstrate component. In some aspects, singulating individual packages ordevices can comprise sawing through a portion of the reflectivematerial, providing an exterior, lateral side wall comprised ofreflective material. In other aspects, the substrate can be sawn throughor otherwise singulated, as a reflective side wall is not required. Insome aspects, the encapsulant can be formed via tapered blades, whichare not bounded or encased by a portion of the reflective material. Inother aspects, the reflective material can at least partially hardenabout encapsulant and/or other phosphoric layers. In some aspects, thepanel can be singulated along lines substantially orthogonal to alongitudinal axis or centerline of the panel.

FIG. 8 illustrates further aspects of components and devices describedherein. As FIG. 8 illustrates, a light emitter component 90 can comprisea substrate 92 provided over a carrying member or substrate holder, H.In some aspects, holder H comprises a layer of tape. LED chips 94 can beelectrically attached to traces (not shown) disposed over substrate 92via wirebonds 96. Multiple encapsulant layers 98 and 100 can be providedover LED chips as desired. Reflector walls 102 can be provided, wheredesired. A singulation tool T₂ can be used to singulate individualpackages or devices from component 90. Notably, singulation tool T₂ cancut through the substrate 92 into a portion of holder H. Singulationtool T₂ can at least partially cut into holder H, but may not fullypenetrate holder H.

Holder H can then be stretched or pulled in directions D1 and D2. Thesubstrates can be easily separated from each other when holder H isstretched, and can also be easily separated from holder H. In thisaspect, singulation tool T₂ can also be used to provide an easier methodof removal.

FIG. 9 is a graphical illustration of exemplary optical propertiesassociated with substrate based light emitter devices and componentsaccording to aspects of the disclosure herein. FIG. 9 illustrates howsuperior color control can be achieved via devices singulated from abatch processed component. FIG. 9 is a graph of white chromaticityregions plotted on the CIE 1931 Curve. The targeted color bins areindicated in diamonds. As the plotted data points, indicated as dots, inFIG. 9 illustrate, devices singulated from a single component cancomprise a tight, stable, and consistent color range. This is alsopossible across other chromaticity bins, and is not limited to the 3A to3D bins which are consistent with a color temperature of about 5000 K.

FIG. 10 illustrates a further embodiment of substrate based lightemitter devices and components according to aspects of the disclosureherein. As discussed in FIGS. 2B to 2D hereinabove, side walls can becreated via scribing and/or ablating material from a front side of acomponent (e.g., where ablation tool T moves directionally from a frontside of substrate component, in a direction from above LED chips).Individual devices can be provided via singulation. The scribe marks canbe at least partially coated and/or filled with a reflective material, alight absorbing or blocking material, silicone, a filtering material,phosphor, or any other type of optical madeira can be provided. In someaspects, scribe marks can be left devoid of material. FIG. 10illustrates creation of side walls and/or scribing a back side of alight emitter component, as opposed to a front side. In some aspects,ablation tool T can move directionally from the back side of substratecomponent (e.g., opposing a surface upon which LED chips are mounted) ina direction from under or below the LED chips.

That is, as FIG. 10 illustrates, a light emitter component generallydesignated 100 can comprise a substrate 112 and multiple LED chips 114disposed over a front surface of substrate 112 as previously described.An encapsulant material 118 can be applied in a single volume over eachof the LED chips 114 and substrate 112 portions at a same time in abatch encapsulation step. Notably, ablation tool T can be used to ablatematerial that is disposed below each LED chip on a back side ofsubstrate 112 that opposes the surface upon which LED chips 114 aremounted. That is, ablation tool T can create a scribe mark extendingthrough portions of substrate 112 and encapsulant. As the broken lineindicates, tool T can be used to create a scribe mark of any depth. Insome aspects, the scribe mark created by tool T can have tapered walls.In some aspects, the scribe mark can be filled with a reflective, lightabsorbing, light blocking, light filtering, silicone, or any other typeof material desired. In some aspects, the scribe mark created by tool Tcan be left devoid of any material when singulating individual devices.

Components and devices described herein can be easily produced as thetime consuming process and/or additional cost associated withindividually molding optical elements and/or dispensing encapsulant overmultiple LED chips individually becomes obsolete. Substrate basedcomponents can be singulated into a plurality of individual substrate(or submount) based devices by dicing, cutting, sawing, or otherwiseseparating components along singulation lines (e.g. FIG. 2F) aftercuring or after hardening of the encapsulant and/or reflective materialor reflective side walls. In some aspects, components can be dicedand/or singulated in a direction substantially orthogonal to alongitudinal axis of a panel substrate.

Notably, panel substrates can comprise the building blocks of customizedSMD type emitter components and devices described herein. For example,in some aspects, single or multi-chip components can be provided,components having any size, shape, and/or pattern of traces can beprovided, and components having the same or differently colored LEDchips can be provided over and/or around portions of the substrate.Notably, customized packages do not require formation of individuallenses or require individually dispensed encapsulant over the LED chips,which can advantageously reduce manufacturing costs, time, and/ormaterials associated with providing components and packages descriedherein. Notably, a multitude of different customized components can beprovided without the expense of creating custom fabricated ceramiccomponents and/or custom molded plastic components. Notably, devices andcomponents described herein can advantageously provide reflective sidewalls, where desired.

Embodiments as disclosed herein may provide one or more of the followingbeneficial technical effects: reduced production costs; reducedprocessing time; stable color targeting; improved manufacturability;improved ability to customize component and/or device features, such asfor example, trace design, substrate thickness, number/type/size/colorof LED chips, encapsulant layers, reflective material, size/shape ofsingulated devices, among others.

While the components and methods have been described herein in referenceto specific aspects, features, and illustrative embodiments, it will beappreciated that the utility of the subject matter is not thus limited,but rather extends to and encompasses numerous other variations,modifications and alternative embodiments, as will suggest themselves tothose of ordinary skill in the field of the present subject matter,based on the disclosure herein. Various combinations andsub-combinations of the structures and features described herein arecontemplated and will be apparent to a skilled person having knowledgeof this disclosure. Any of the various features and elements asdisclosed herein may be combined with one or more other disclosedfeatures and elements unless indicated to the contrary herein.Correspondingly, the subject matter as hereinafter claimed is intendedto be broadly construed and interpreted, as including all suchvariations, modifications and alternative embodiments, within its scopeand including equivalents of the claims.

What is claimed is:
 1. A light emitter device comprising: a substrate;at least one light emitter chip on a first side of the substrate,wherein the substrate comprises a recessed portion disposed below alevel of the light emitter chip; a layer of phosphor-containingencapsulant disposed over the at least one light emitter chip; and anon-reflective, external side wall forming an outer surface of thedevice, the side wall being at least partially disposed in the recessedportion of the substrate, wherein a first portion of the side wall isdisposed above a height of the light emitter chip, wherein a secondportion of the side wall is disposed below a level of the light emitterchip, wherein the first portion of the side wall contacts the layer ofphosphor-containing encapsulant, and wherein the side wall is spacedapart from the light emitter chip by the layer of phosphor-containingencapsulant thereby retaining the layer of phosphor-containingencapsulant.
 2. The device according to claim 1, wherein the substratecomprises ceramic.
 3. The device according to claim 1, wherein the sidewall comprises silicone.
 4. The device according to claim 1, wherein theside wall comprises a polymeric material.
 5. The device according toclaim 1, wherein the side wall comprises at least some light diffusingmaterial.
 6. The device according to claim 1, wherein the side wallcomprises multiple layers of material.
 7. The device according to claim1, wherein the side wall comprises phosphor.
 8. The device according toclaim 1, wherein the side wall comprises a filter or light filteringmaterial.
 9. The device according to claim 1, wherein the side wallcomprises a material adapted to block some light.
 10. The deviceaccording to claim 1, wherein the side wall comprises a material adaptedto absorb some light.
 11. The device according to claim 1, wherein thesubstrate comprises alumina.
 12. The device according to claim 1,wherein the substrate comprises aluminum nitride.
 13. The deviceaccording to claim 1, further comprising a layer of non-phosphorcontaining encapsulant provided over the at least one light emitterchip.
 14. The device according to claim 1, wherein the side wallcomprises phosphor that is non-uniformly dispersed therein.
 15. Thedevice according to claim 1, wherein the side wall comprises athermoplastic material.
 16. The device according to claim 1, furthercomprising at least two layers of phosphor-containing encapsulantdisposed over the at least one light emitter chip.
 17. A light emitterdevice comprising: a ceramic substrate; at least one light emitter chipon a first side of the substrate, wherein the substrate comprises arecessed portion disposed below a level of the light emitter chip; alayer of encapsulant disposed over the at least one light emitter chip;and a non-reflective, external side wall forming an outer surface of thedevice being spaced apart from the light emitter chip by the layer ofencapsulant for retaining the layer of encapsulant, the side wall beingat least partially disposed in the recessed portion of the substrate,wherein a first portion of the non-reflective side wall is disposedabove a height of the light emitter chip, and wherein a second portionof the non-reflective side wall is disposed below a level of the lightemitter chip.
 18. A light emitter device comprising: a substrate; atleast one light emitter chip on a first side of the substrate, whereinthe substrate comprises a recessed portion disposed below a level of thelight emitter chip; a layer of phosphor-containing encapsulant disposedover the at least one light emitter chip; and a lateral side wall atleast partially disposed in the recessed portion of the substrate,wherein the lateral side wall comprises phosphor that is non-uniformlydispersed therein, wherein a first portion of the lateral side wall isdisposed above a height of the light emitter chip, wherein a secondportion of the lateral side wall is disposed below a level of the lightemitter chip, wherein the first portion of the lateral side wallcontacts the layer of phosphor-containing encapsulant, and wherein thelateral side wall is spaced apart from the light emitter chip by thelayer of phosphor-containing encapsulant thereby retaining the layer ofphosphor-containing encapsulant.